40‐4: <i>Invited Paper:</i> Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions
نویسندگان
چکیده
We demonstrated self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) where the source/drain (S/D) regions were induced into a low resistance state by first coating thin hafnium (Hf) film and then performing thermal annealing in oxygen. The experimental results show that sheet of Hf‐treated a‐IGZO layer can be as 408 Ω/□. TFT fabricated proposed processes shows excellent electrical performances, such field effect mobility 16.6 cm 2 /V·s, subthreshold swing 0.20 V/dec, an on/off current ratio over 10 9 , high stability against stress.
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ژورنال
عنوان ژورنال: Sid's Digest Of Technical Papers
سال: 2023
ISSN: ['2154-6738', '2168-0159', '2154-6746', '0097-966X']
DOI: https://doi.org/10.1002/sdtp.16624